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Littelfuse Power Semi TO-263 3 1S2C image
Discrete Semiconductor Products

IXTA44P15T

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Littelfuse/Commercial Vehicle Products

DISCMSFT PCHAN-TRENCH GATE TO-263D2

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Littelfuse Power Semi TO-263 3 1S2C image
Discrete Semiconductor Products

IXTA44P15T

Active
Littelfuse/Commercial Vehicle Products

DISCMSFT PCHAN-TRENCH GATE TO-263D2

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTA44P15T
Current - Continuous Drain (Id) @ 25°C44 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]175 nC
Input Capacitance (Ciss) (Max) @ Vds13400 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]298 W
Rds On (Max) @ Id, Vgs65 mOhm
Supplier Device PackageTO-263AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)15 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 6.26
50$ 5.00
100$ 4.47
500$ 3.95
1000$ 3.55
2000$ 3.33

Description

General part information

IXTA44P15T Series

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching

Documents

Technical documentation and resources