Specification	FQD17N08LTM

Current - Continuous Drain (Id) @ 25°C	12.9 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.5 nC
Input Capacitance (Ciss) (Max) @ Vds	520 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	40 W, 2.5 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

FQD17N08L Series

Power MOSFET, N-Channel, Logic Level, QFET®, 80 V, 12.9 A, 100 mΩ, DPAK

Part	Package / Case	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FQD17N08LTM	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.5 W 40 W	2 V	MOSFET (Metal Oxide)	12.9 A	-55 °C	150 °C	80 V	100 mOhm	N-Channel	20 V	520 pF	10 V	5 V	Surface Mount	DPAK	11.5 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQD17N08L Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.