Discrete Semiconductor Products
RD3L07BBGTL1
ActiveRohm Semiconductor
NCH 60V 115A, TO-252 (DPAK), POWER MOSFET
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Discrete Semiconductor Products
RD3L07BBGTL1
ActiveRohm Semiconductor
NCH 60V 115A, TO-252 (DPAK), POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RD3L07BBGTL1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 70 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2950 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 102 W |
| Rds On (Max) @ Id, Vgs | 3.9 mOhm |
| Supplier Device Package | TO-252 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2171 | $ 3.41 | |
Description
General part information
RD3L07BBG Series
RD3L07BBG is a power MOSFET with low on - resistance, suitable for switching.
Documents
Technical documentation and resources