Discrete Semiconductor Products

SI4904DY-T1-E3

LTB

MOSFET 2N-CH 40V 8A 8SOIC

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Discrete Semiconductor Products

LTB

MOSFET 2N-CH 40V 8A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4904DY-T1-E3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs [Max]	85 nC
Input Capacitance (Ciss) (Max) @ Vds	2390 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	3.25 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Mounting Type	Configuration	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI4904DY-T1-E3	16 mOhm	40 V	8 A	3.25 W	Surface Mount	2 N-Channel (Dual)	8-SOIC	3.9 mm	0.154 in	85 nC	MOSFET (Metal Oxide)	2390 pF	8-SOIC	2 V	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SI4904DY-T1-GE3	16 mOhm	40 V	8 A	3.25 W	Surface Mount	2 N-Channel (Dual)	8-SOIC	3.9 mm	0.154 in	85 nC	MOSFET (Metal Oxide)	2390 pF	8-SOIC	2 V	-55 °C	150 °C

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General part information

Mosfet Array 40V 8A 3.25W Surface Mount 8-SOIC

Technical documentation and resources