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TO-3P-3,TO-247-3
Discrete Semiconductor Products

FCA47N60

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP>, EASY DRIVE, 600 V, 47 A, 70 MΩ, TO-3P

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TO-3P-3,TO-247-3
Discrete Semiconductor Products

FCA47N60

NRND
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP>, EASY DRIVE, 600 V, 47 A, 70 MΩ, TO-3P

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFCA47N60
Current - Continuous Drain (Id) @ 25°C47 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs270 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]8000 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-65-3, TO-3P-3
Power Dissipation (Max) [Max]417 W
Rds On (Max) @ Id, Vgs70 mOhm
Supplier Device PackageTO-3PN
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 12.51
10$ 8.73
100$ 6.59
500$ 6.36
NewarkEach 250$ 7.12
500$ 6.92
ON SemiconductorN/A 1$ 5.85

Description

General part information

FCA47N60 Series

SuperFET®MOSFET is the first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.