Specification	FDB14N30TM

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	1060 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	140 W
Rds On (Max) @ Id, Vgs	290 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FDB14N30 Series

Power MOSFET, N-Channel, UniFETTM, 300 V, 14 A, 290 mΩ, D2PAK

Part	Rds On (Max) @ Id, Vgs	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDB14N30TM	290 mOhm	MOSFET (Metal Oxide)	30 V	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	25 nC	5 V	10 V	300 V	TO-263 (D2PAK)	1060 pF	140 W	Surface Mount	14 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDB14N30 Series

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.