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NSVBAS21M3T5G
Discrete Semiconductor Products

NSVDTA123EM3T5G

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ON Semiconductor

PNP BIPOLAR DIGITAL TRANSISTOR (BRT)/ REEL

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NSVBAS21M3T5G
Discrete Semiconductor Products

NSVDTA123EM3T5G

Active
ON Semiconductor

PNP BIPOLAR DIGITAL TRANSISTOR (BRT)/ REEL

Technical Specifications

Parameters and characteristics for this part

SpecificationNSVDTA123EM3T5G
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce8 hFE
GradeAutomotive
Mounting TypeSurface Mount
Package / CaseSOT-723
Power - Max [Max]260 mW
QualificationAEC-Q101
Resistor - Base (R1)2.2 kOhm
Resistor - Emitter Base (R2)2.2 kOhms
Supplier Device PackageSOT-723
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 8000$ 0.07
16000$ 0.06
24000$ 0.06
56000$ 0.05
200000$ 0.04
NewarkEach (Supplied on Full Reel) 6000$ 0.05
12000$ 0.04
18000$ 0.04
30000$ 0.04
ON SemiconductorN/A 1$ 0.04

Description

General part information

DTA123JM3 Series

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.