Discrete Semiconductor Products

ECH8619-TL-E

Obsolete

MOSFET N/P-CH 60V 3A/2A 8ECH

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 60V 3A/2A 8ECH

Technical Specifications

Parameters and characteristics for this part

Specification	ECH8619-TL-E

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	3 A, 2 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	12.8 nC
Input Capacitance (Ciss) (Max) @ Vds	560 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs	93 mOhm
Supplier Device Package	8-ECH
Technology	MOSFET (Metal Oxide)

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	FET Feature	Mounting Type	Power - Max [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Configuration	Operating Temperature	Drain to Source Voltage (Vdss)	Technology
ON Semiconductor ECH8619-TL-E	560 pF	12.8 nC	93 mOhm	Logic Level Gate	Surface Mount	1.5 W	8-ECH	2 A 3 A	N and P-Channel	150 °C	60 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 60V 3A, 2A 1.5W Surface Mount 8-ECH

Technical documentation and resources