Discrete Semiconductor Products

SP8M51TB1

Obsolete

MOSFET N/P-CH 100V 3A/2.5A 8SOP

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 100V 3A/2.5A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	SP8M51TB1

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	2.5 A, 3 A
Drain to Source Voltage (Vdss)	100 V
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2 W
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)

Automotive 100V Nch+Pch Power MOSFET

Part	Supplier Device Package	Technology	Power - Max [Max]	Drain to Source Voltage (Vdss)	Package / Case	Package / Case	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs(th) (Max) @ Id	Configuration	Current - Continuous Drain (Id) @ 25°C
Rohm Semiconductor SP8M51HZGTB	8-SOP	MOSFET (Metal Oxide)	2 W	100 V	0.154 in	8-SOIC	3.9 mm	170 mOhm 290 mOhm	610 pF 1550 pF	150 °C	8.5 nC 12.5 nC	Surface Mount	2.5 V	N and P-Channel
Rohm Semiconductor SP8M51TB1	8-SOP	MOSFET (Metal Oxide)	2 W	100 V	0.154 in	8-SOIC	3.9 mm			150 °C		Surface Mount		N and P-Channel	2.5 A 3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

SP8M51HZG is a dual (Nch+Pch) power mosfet for switching power supply.

Technical documentation and resources