Discrete Semiconductor Products

HUFA76429D3

Obsolete

MOSFET N-CH 60V 20A IPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 20A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	HUFA76429D3

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Input Capacitance (Ciss) (Max) @ Vds	1480 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	3 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id
ON Semiconductor HUFA76429D3	4.5 V 10 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	20 A	IPAK TO-251-3 Short Leads TO-251AA	N-Channel	110 W	60 V	16 V	1480 pF	46 nC	23 mOhm	Through Hole	IPAK	3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 20A (Tc) 110W (Tc) Through Hole IPAK

Technical documentation and resources

No documents available