Discrete Semiconductor Products

NZT660A

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BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 60 V, 3 A, 2 W, SOT-223, SURFACE MOUNT

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Discrete Semiconductor Products

Active

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 60 V, 3 A, 2 W, SOT-223, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	NZT660A

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Frequency - Transition	75 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	SOT-223-4
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

PNP Low Saturation Transistor

Part	Power - Max [Max]	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case
ON Semiconductor NZT660A	2 W	SOT-223-4	Surface Mount	-55 °C	150 °C	PNP	500 mV	250	60 V	75 MHz	100 nA	3 A	TO-261-4 TO-261AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

These devices are designed with high current gain and low saturation voltage with collector currents up to 3 A continuous.

Technical documentation and resources