Specification	NTMFS7D5N15MC

Current - Continuous Drain (Id) @ 25°C	13.5 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	8 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Input Capacitance (Ciss) (Max) @ Vds	3835 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	3.3 W
Rds On (Max) @ Id, Vgs	7.9 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

NTMFS7D5N15MC Series

N-Channel Shielded Gate PowerTrench® MOSFET 150V, 95.6A, 7.9mΩ

Part	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Technology
ON Semiconductor NTMFS7D5N15MC	150 V	8-PowerTDFN	4.5 V	N-Channel	8-PQFN (5x6)	-55 °C	175 ░C	20 V	8 V 10 V	3835 pF	Surface Mount	3.3 W	7.9 mOhm	13.5 A	46 nC	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.25
		10	$ 3.81
		25	$ 3.61
		100	$ 2.96
		250	$ 2.66
		500	$ 2.56
		1000	$ 2.13
	Digi-Reel®	1	$ 4.25
		10	$ 3.81
		25	$ 3.61
		100	$ 2.96
		250	$ 2.66
		500	$ 2.56
		1000	$ 2.13
	Tape & Reel (TR)	3000	$ 2.05
Newark	Each (Supplied on Full Reel)	1000	$ 2.73
ON Semiconductor	N/A	1	$ 2.12

Description

General part information

NTMFS7D5N15MC Series

This N-Channel MV MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.