Discrete Semiconductor Products

KST3904MTF

Obsolete

40V 350MW 100@10MA,1V 200MA NPN SOT-23-3 BIPOLAR (BJT) ROHS

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Discrete Semiconductor Products

Obsolete

40V 350MW 100@10MA,1V 200MA NPN SOT-23-3 BIPOLAR (BJT) ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	KST3904MTF

Current - Collector (Ic) (Max) [Max]	200 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	300 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	350 mW
Supplier Device Package	SOT-23-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

PNP Epitaxial Silicon Transistor

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Package / Case	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Transistor Type	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Mounting Type
ON Semiconductor KST3904MTF	40 V	300 MHz	SC-59 SOT-23-3 TO-236-3	200 mA	100	350 mW	NPN	SOT-23-3	300 mV	Surface Mount
ON Semiconductor KST3904MTF	40 V	300 MHz	SC-59 SOT-23-3 TO-236-3	200 mA	100	350 mW	NPN	SOT-23-3	300 mV	Surface Mount
ON Semiconductor KST3906MTF	40 V	250 MHz	SC-59 SOT-23-3 TO-236-3	200 mA	100	350 mW	PNP	SOT-23-3	400 mV	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources