Discrete Semiconductor Products

NDBA180N10BT4H

Obsolete

MOSFET N-CH 100V 180A D2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 180A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	NDBA180N10BT4H

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	15 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	95 nC
Input Capacitance (Ciss) (Max) @ Vds	6950 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	2.8 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package
ON Semiconductor NDBA180N10BT4H	Surface Mount	6950 pF	100 V	200 W	95 nC	2.8 mOhm	175 °C	180 A	20 V	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	10 V 15 V	TO-263 (D2PAK)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 180A (Ta) 200W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources

No documents available