
Deep-Dive with AI
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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | 5HN01M-TL-E |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 mA |
| Drain to Source Voltage (Vdss) | 50 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 4 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 1.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 6.2 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-70, SOT-323 |
| Power Dissipation (Max) [Max] | 150 mW |
| Rds On (Max) @ Id, Vgs [Max] | 7.5 Ohm |
| Supplier Device Package | MCP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
5HN01 Series
N-Channel 50 V 100mA (Ta) 150mW (Ta) Surface Mount MCP
Documents
Technical documentation and resources