Discrete Semiconductor Products

PMZB950UPELYL

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PMZB950UPEL - 20 V, P-CHANNEL TRENCH MOSFET@EN-US DFN 3-PIN

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Discrete Semiconductor Products

Active

PMZB950UPEL - 20 V, P-CHANNEL TRENCH MOSFET@EN-US DFN 3-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PMZB950UPELYL

Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	43 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max)	360 mW
Rds On (Max) @ Id, Vgs [Max]	1.4 Ohm
Supplier Device Package	DFN1006B-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)
Freescale Semiconductor - NXP PMZB950UPELYL	950 mV	-55 °C	150 °C	3-XFDFN	Surface Mount	43 pF	MOSFET (Metal Oxide)	2.1 nC	20 V	8 V	360 mW	P-Channel	1.4 Ohm	500 mA	DFN1006B-3	1.2 V 4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 500mA (Ta) 360mW (Ta) Surface Mount DFN1006B-3

Technical documentation and resources