Discrete Semiconductor Products

IRFP340PBF

LTB

MOSFET N-CH 400V 11A TO247-3

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Discrete Semiconductor Products

LTB

MOSFET N-CH 400V 11A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRFP340PBF

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	62 nC
Input Capacitance (Ciss) (Max) @ Vds	1400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	550 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	FET Type
Vishay General Semiconductor - Diodes Division IRFP340PBF	-55 °C	150 °C	11 A	4 V	62 nC	TO-247-3	1400 pF	MOSFET (Metal Oxide)	20 V	150 W	400 V	550 mOhm	10 V	TO-247AC	Through Hole	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 400 V 11A (Tc) 150W (Tc) Through Hole TO-247AC

Technical documentation and resources

No documents available