Specification	KSA931YTA

Current - Collector (Ic) (Max) [Max]	700 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-92-3 Long Body, Formed Leads, TO-226-3
Power - Max [Max]	1 W
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

KSA931 Series

Part	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Power - Max [Max]
ON Semiconductor KSA931YTA	60 V	Through Hole	TO-92-3	700 mV	150 °C	700 mA	PNP	120	Formed Leads TO-226-3 TO-92-3 Long Body	100 nA	100 MHz	1 W
ON Semiconductor KSA931OTA	60 V	Through Hole	TO-92-3	700 mV	150 °C	700 mA	PNP	70	Formed Leads TO-226-3 TO-92-3 Long Body	100 nA	100 MHz	1 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 60 V 700 mA 100MHz 1 W Through Hole TO-92-3

Technical documentation and resources