Discrete Semiconductor Products

UGF12JTHE3/45

Obsolete

DIODE GEN PURP 600V 12A ITO220AC

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 600V 12A ITO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	UGF12JTHE3/45

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	30 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2 Full Pack, Isolated Tab
Qualification	AEC-Q101
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.75 V

Part	Technology	Grade	Supplier Device Package	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Qualification	Package / Case	Current - Reverse Leakage @ Vr	Speed
Vishay General Semiconductor - Diodes Division UGF12HTHE3/45	Standard	Automotive	ITO-220AC	Through Hole	500 V	12 A	1.75 V	150 °C	-55 °C	50 ns	AEC-Q101	TO-220-2 Full Pack Isolated Tab	30 µA	200 mA 500 ns
Vishay General Semiconductor - Diodes Division UGF12JTHE3/45	Standard	Automotive	ITO-220AC	Through Hole	600 V	12 A	1.75 V	150 °C	-55 °C	50 ns	AEC-Q101	TO-220-2 Full Pack Isolated Tab	30 µA	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 12A Through Hole ITO-220AC

Technical documentation and resources