Discrete Semiconductor Products

NDS8858H

Obsolete

MOSFET N/P-CH 30V 6.3A 8SOIC

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 30V 6.3A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	NDS8858H

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	6.3 A, 4.8 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	30 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1 W
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.8 V

Part	Technology	Mounting Type	Configuration	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id
ON Semiconductor NDS8858H	MOSFET (Metal Oxide)	Surface Mount	N and P-Channel	4.8 A 6.3 A	35 mOhm	1 W	-55 °C	150 °C	30 V	8-SOIC	30 nC	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	2.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	429	$ 0.70

General part information

Mosfet Array 30V 6.3A, 4.8A 1W Surface Mount 8-SOIC

Technical documentation and resources

No documents available