Discrete Semiconductor Products

EMF8T2R

NRND

TRANS NPN PREBIAS/NPN 0.15W EMT6

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Discrete Semiconductor Products

NRND

TRANS NPN PREBIAS/NPN 0.15W EMT6

Technical Specifications

Parameters and characteristics for this part

Specification	EMF8T2R

Current - Collector (Ic) (Max)	100 mA, 500 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	68, 270
Frequency - Transition	250 MHz, 320 MHz
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	47 kOhms
Supplier Device Package	EMT6
Transistor Type	1 NPN Pre-Biased, 1 NPN
Vce Saturation (Max) @ Ib, Ic	250 mV, 300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V
Voltage - Collector Emitter Breakdown (Max) [Min]	12 V

Part	Transistor Type	Resistor - Base (R1)	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max) [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Supplier Device Package	Package / Case	Resistor - Emitter Base (R2)
Rohm Semiconductor EMF8T2R	1 NPN 1 NPN Pre-Biased	47 kOhms	250 mV 300 mV	Surface Mount	250 MHz 320 MHz	500 nA	100 mA 500 mA	12 V	50 V	68 270	EMT6	SOT-563 SOT-666	47 kOhms

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 NPN 50V, 12V 100mA, 500mA 250MHz, 320MHz 150mW Surface Mount EMT6

Technical documentation and resources