Discrete Semiconductor Products

EMF8T2R

NRND

TRANS NPN PREBIAS/NPN 0.15W EMT6

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Discrete Semiconductor Products

NRND

TRANS NPN PREBIAS/NPN 0.15W EMT6

Technical Specifications

Parameters and characteristics for this part

Specification	EMF8T2R

Current - Collector (Ic) (Max)	500 mA, 100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	270, 68
Frequency - Transition	250 MHz, 320 MHz
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	EMT6
Transistor Type	1 NPN, 1 NPN Pre-Biased
Vce Saturation (Max) @ Ib, Ic [Max]	300 mV, 250 mV
Voltage - Collector Emitter Breakdown (Max)	12 V, 50 V

Part	Mounting Type	Resistor - Base (R1)	DC Current Gain (hFE) (Min) @ Ic, Vce	Resistor - Emitter Base (R2)	Frequency - Transition	Supplier Device Package	Transistor Type	Current - Collector (Ic) (Max)	Vce Saturation (Max) @ Ib, Ic [Max]	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Current - Collector Cutoff (Max) [Max]
Rohm Semiconductor EMF8T2R	Surface Mount	47 kOhms	68 270	47000 Ohms	250 MHz 320 MHz	EMT6	1 NPN 1 NPN Pre-Biased	100 mA 500 mA	250 mV 300 mV	12 V 50 V	SOT-563 SOT-666	500 nA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 NPN 50V, 12V 100mA, 500mA 250MHz, 320MHz 150mW Surface Mount EMT6

Technical documentation and resources