Discrete Semiconductor Products

PBSS4130QAZ

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TRANS NPN 30V 1A DFN1010D-3

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Discrete Semiconductor Products

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TRANS NPN 30V 1A DFN1010D-3

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS4130QAZ

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	180 hFE
Frequency - Transition	190 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	3-XDFN Exposed Pad
Power - Max [Max]	325 mW
Qualification	AEC-Q100
Supplier Device Package	DFN1010D-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	245 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

30 V; 1 A NPN low VCEsat (BISS) transistor

Part	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Qualification	Package / Case	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Power - Max [Max]	Frequency - Transition	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Grade	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce
Freescale Semiconductor - NXP PBSS4130T,215	Surface Mount	30 V	1 A	300	AEC-Q100	SC-59 SOT-23-3 TO-236-3	270 mV	NPN	480 mW	100 MHz	TO-236AB	100 nA	Automotive	150 °C
Freescale Semiconductor - NXP PBSS4130QAZ	Surface Mount	30 V	1 A		AEC-Q100	3-XDFN Exposed Pad	245 mV	NPN	325 mW	190 MHz	DFN1010D-3	100 nA	Automotive	150 °C	180 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsatand RCEsatparameters. PNP complement: PBSS5130T.

Technical documentation and resources