
Discrete Semiconductor Products
LSIC2SD065D10A
ActiveLITTELFUSE
650V/10A SIC SBD?TO263-2LAEC-Q101/ TR ROHS COMPLIANT: YES
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Discrete Semiconductor Products
LSIC2SD065D10A
ActiveLITTELFUSE
650V/10A SIC SBD?TO263-2LAEC-Q101/ TR ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | LSIC2SD065D10A |
|---|---|
| Capacitance @ Vr, F | 470 pF |
| Current - Average Rectified (Io) | 27 A |
| Current - Reverse Leakage @ Vr | 50 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
LSIC2SD065D10A Series
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
Documents
Technical documentation and resources