Discrete Semiconductor Products

BSS64

Obsolete

NPN GENERAL PURPOSE AMPLIFIER

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Discrete Semiconductor Products

Obsolete

NPN GENERAL PURPOSE AMPLIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	BSS64

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	20
Frequency - Transition	60 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	350 mW
Supplier Device Package	SOT-23-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

NPN General Purpose Amplifier

Part	Transistor Type	Mounting Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce	Supplier Device Package
ON Semiconductor BSS64	NPN	Surface Mount	350 mW	80 V	200 mA	200 mV	-55 °C	150 °C	100 nA	60 MHz	SC-59 SOT-23-3 TO-236-3	20	SOT-23-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16.