Specification	NTTFS6H880NTAG

Current - Continuous Drain (Id) @ 25°C	6.3 A, 21 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	370 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	31 W, 3.1 W
Rds On (Max) @ Id, Vgs	32 mOhm
Supplier Device Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTTFS6H880N Series

Power MOSFET, Single N-Channel, 80V, 22A, 32mΩ

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type
ON Semiconductor NTTFS6H880NTAG	8-WDFN (3.3x3.3)	6 V 10 V	3.1 W 31 W	MOSFET (Metal Oxide)	8-PowerWDFN	6.9 nC	6.3 A 21 A	370 pF	32 mOhm	Surface Mount	20 V	80 V	4 V	-55 °C	175 ░C	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Commercial Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance.