Discrete Semiconductor Products

SI1036X-T1-GE3

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MOSFET 2N-CH 30V 0.61A SC89-6

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Discrete Semiconductor Products

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MOSFET 2N-CH 30V 0.61A SC89-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1036X-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	610 mA
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	1.2 nC
Input Capacitance (Ciss) (Max) @ Vds	36 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	220 mW
Rds On (Max) @ Id, Vgs	540 mOhm
Supplier Device Package	SC-89-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Configuration	Rds On (Max) @ Id, Vgs	Package / Case	Power - Max [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI1036X-T1-GE3	1.2 nC	30 V	-55 °C	150 °C	Surface Mount	2 N-Channel (Dual)	540 mOhm	SOT-563 SOT-666	220 mW	MOSFET (Metal Oxide)	610 mA	SC-89-6	36 pF	1 V

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General part information

Mosfet Array 30V 610mA (Ta) 220mW Surface Mount SC-89-6

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