Discrete Semiconductor Products

2SC5227A-5-TB-E

Obsolete

RF TRANS NPN 10V 7GHZ 3CP

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Discrete Semiconductor Products

Obsolete

RF TRANS NPN 10V 7GHZ 3CP

Technical Specifications

Parameters and characteristics for this part

Specification	2SC5227A-5-TB-E

Current - Collector (Ic) (Max) [Max]	70 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	135
Frequency - Transition	7 GHz
Gain	12 dBi
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f)	1 dB
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Supplier Device Package	3-CP
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	10 V

RF Transistor, NPN Single CP, 10 V, 70 mA, f<sub>T</sub> = 7 GHz

Part	Gain	Supplier Device Package	Package / Case	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Mounting Type	Operating Temperature	Noise Figure (dB Typ @ f)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Power - Max [Max]
ON Semiconductor 2SC5227A-5-TB-E	12 dBi	3-CP	SC-59 SOT-23-3 TO-236-3	70 mA	10 V	NPN	Surface Mount	150 °C	1 dB	135	7 GHz	200 mW
ON Semiconductor 2SC5227A-4-TB-E	12 dBi	3-CP	SC-59 SOT-23-3 TO-236-3	70 mA	10 V	NPN	Surface Mount	150 °C	1 dB		7 GHz	200 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

2SC5227A is RF Transistor, 10 V, 70 mA, fT= 7 GHz, NPN Single CP for VHF to UHF Wide-Band Low-Noise Amplifier Applications.

Technical documentation and resources