Discrete Semiconductor Products

RJK0332DPB-01#J0

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MOSFET, N-CH, 30V, 35A, LFPAK ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

MOSFET, N-CH, 30V, 35A, LFPAK ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0332DPB-01#J0

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	14 nC
Input Capacitance (Ciss) (Max) @ Vds	2180 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	4.7 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Nch Power MOSFET 30V 35A 4.7mohm LFPAK56

Part	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Vgs(th) (Max) @ Id [Max]
Renesas Electronics Corporation RJK0332DPB-01#J0	SC-100 SOT-669	4.7 mOhm	N-Channel	Surface Mount	30 V	45 W	20 V	LFPAK	14 nC	MOSFET (Metal Oxide)	2180 pF	35 A	4.5 V 10 V	150 °C	2.5 V

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General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources