Specification	KSD526Y

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	30 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	8 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	30 W
Supplier Device Package	TO-220-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

KSD526 Series

NPN Epitaxial Silicon Transistor

Part	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Power - Max [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature
ON Semiconductor KSD526Y	Through Hole	80 V	4 A	TO-220-3	8 MHz	120	NPN	30 W	TO-220-3	30 µA	1.5 V	150 °C
ON Semiconductor KSD526O	Through Hole	80 V	4 A	TO-220-3	8 MHz	70 hFE	NPN	30 W	TO-220-3	30 µA	1.5 V	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources