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Technical Specifications
Parameters and characteristics for this part
| Specification | RQ6E055BNTCR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 355 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Power Dissipation (Max) [Max] | 1.25 W |
| Rds On (Max) @ Id, Vgs [Max] | 25 mOhm |
| Supplier Device Package | TSMT6 (SC-95) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
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Description
General part information
RQ6E055BN Series
RQ6E055BN is small surface mount package MOSFET for switching.
Documents
Technical documentation and resources