Specification	FDL100N50F

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	238 nC
Input Capacitance (Ciss) (Max) @ Vds	12000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max) [Max]	2500 W
Rds On (Max) @ Id, Vgs	55 mOhm
Supplier Device Package	TO-264-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FDL100N50F Series

Power MOSFET, N-Channel, UniFETTM, FRFET®, 500 V, 100 A, 55 mΩ, TO-264

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)
ON Semiconductor FDL100N50F	100 A	30 V	2500 W	12000 pF	TO-264-3	10 V	N-Channel	Through Hole	5 V	-55 °C	150 °C	TO-264-3 TO-264AA	238 nC	55 mOhm	MOSFET (Metal Oxide)	500 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 18.77
		10	$ 13.41
		100	$ 10.74
Newark	Each	1	$ 25.23
		10	$ 25.01
		25	$ 18.90
		50	$ 18.25
		100	$ 17.82
ON Semiconductor	N/A	1	$ 11.45

Description

General part information

FDL100N50F Series

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET®MOSFET has been enhanced by lifetime control. Its trris less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Documents

Technical documentation and resources

Package Drawing-340CA-TO-264-3LD

Package Drawing

Datasheet

Technical Data Sheet EN

Datasheet