Zenode.ai Logo
Beta
TO-264
Discrete Semiconductor Products

IXFK240N15T2

Active
Littelfuse/Commercial Vehicle Products

DISCMSFT NCHTRENCHGATE-GEN2 TO-264(3)/ TUBE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
TO-264
Discrete Semiconductor Products

IXFK240N15T2

Active
Littelfuse/Commercial Vehicle Products

DISCMSFT NCHTRENCHGATE-GEN2 TO-264(3)/ TUBE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIXFK240N15T2
Current - Continuous Drain (Id) @ 25°C240 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs460 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]32000 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-264AA, TO-264-3
Power Dissipation (Max)1250 W
Rds On (Max) @ Id, Vgs5.2 mOhm
Supplier Device PackageTO-264AA (IXFK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 22.84
10$ 16.47
100$ 13.27
NewarkEach 250$ 14.97
500$ 13.91

Description

General part information

IXFK240N25X3 Series

These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost

Documents

Technical documentation and resources