
MT40A1G16TD-062E AIT:F
ActiveDRAM, AEC-Q100, DDR4, 16 GBIT, 1G X 16BIT, 1.6 GHZ, FBGA, 96 PINS
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MT40A1G16TD-062E AIT:F
ActiveDRAM, AEC-Q100, DDR4, 16 GBIT, 1G X 16BIT, 1.6 GHZ, FBGA, 96 PINS
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Technical Specifications
Parameters and characteristics for this part
| Specification | MT40A1G16TD-062E AIT:F |
|---|---|
| Access Time | 19 ns |
| Clock Frequency | 1600 MHz |
| Grade | Automotive |
| Memory Format | DRAM |
| Memory Interface | POD |
| Memory Organization | 1 G |
| Memory Type | Volatile |
| Operating Temperature [Max] | 95 °C |
| Operating Temperature [Min] | -40 °C |
| Qualification | AEC-Q100 |
| Technology | SDRAM - DDR4 |
| Write Cycle Time - Word, Page | 15 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
MT40A1G16 Series
MT40A1G16TD-062E AIT:F is a DDR4 SDRAM. It is a high-speed dynamic random-access memory internally configured as an eight-bank DRAM for the x16 configuration and as a 16-bank DRAM for the x4 and x8 configurations. The DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins. A single READ or WRITE operation for the DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins.
Documents
Technical documentation and resources