Discrete Semiconductor Products
VS-8EWS10STRR-M3
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 8A DPAK
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Discrete Semiconductor Products
VS-8EWS10STRR-M3
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 8A DPAK
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | VS-8EWS10STRR-M3 |
|---|---|
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage @ Vr | 50 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | TO-252AA (DPAK) |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 0.41 | |
| 6000 | $ 0.39 | |||
| 9000 | $ 0.38 | |||
Description
General part information
8EWS10 Series
Diode 1000 V 8A Surface Mount TO-252AA (DPAK)
Documents
Technical documentation and resources
No documents available
