Discrete Semiconductor Products

SI7439DP-T1-E3

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MOSFET P-CH 150V 3A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET P-CH 150V 3A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7439DP-T1-E3

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	135 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	1.9 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI7439DP-T1-E3	PowerPAK® SO-8	4 V	1.9 W	Surface Mount	20 V	PowerPAK® SO-8	135 nC	MOSFET (Metal Oxide)	150 V	6 V 10 V	-55 °C	150 °C	P-Channel	90 mOhm	3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 150 V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Technical documentation and resources