Discrete Semiconductor Products

UPA1760G-E1-AT

Obsolete

NCH DUAL POWER MOSFET 30V 8.0A 26.0MOHM POWER SOP8

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Discrete Semiconductor Products

Obsolete

NCH DUAL POWER MOSFET 30V 8.0A 26.0MOHM POWER SOP8

Technical Specifications

Parameters and characteristics for this part

Specification	UPA1760G-E1-AT

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	14 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	760 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC (0.173", 4.40mm Width)
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Operating Temperature	Configuration	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Technology
Renesas Electronics Corporation UPA1760G-E1-A	Surface Mount	150 °C	2 N-Channel (Dual)	8 A	8-SOIC (0.173" 4.40mm Width)	760 pF	14 nC	26 mOhm	2 W	30 V	8-SOP	2.5 V	MOSFET (Metal Oxide)
Renesas Electronics Corporation UPA1760G-E1-AT				8 A
Renesas Electronics Corporation UPA1760G-E1-AT	Surface Mount	150 °C	2 N-Channel (Dual)	8 A	8-SOIC (0.173" 4.40mm Width)	760 pF	14 nC	26 mOhm	2 W	30 V	8-SOP	2.5 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The UPA1760G is a Nch Dual Power Mosfet 30V 8.0A 26.0Mohm Power Sop8.

Technical documentation and resources