Discrete Semiconductor Products

ALD110900APAL

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MOSFETS DUAL EPAD(R) N-CH

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Discrete Semiconductor Products

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MOSFETS DUAL EPAD(R) N-CH

Technical Specifications

Parameters and characteristics for this part

Specification	ALD110900APAL

Configuration	2 N-Channel (Dual) Matched Pair
Drain to Source Voltage (Vdss)	10.6 V
Input Capacitance (Ciss) (Max) @ Vds	2.5 pF
Mounting Type	Through Hole
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	8-DIP (0.300", 7.62mm)
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	500 Ohm
Supplier Device Package	8-PDIP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	10 mV

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Configuration	Supplier Device Package	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]
Advanced Linear Devices Inc. ALD110900APAL	10.6 V	2.5 pF	500 Ohm	2 N-Channel (Dual) Matched Pair	8-PDIP	8-DIP (0.300" 7.62mm)	Through Hole	10 mV	MOSFET (Metal Oxide)	70 °C	0 °C	500 mW

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General part information

Mosfet Array 10.6V 500mW Through Hole 8-PDIP

Technical documentation and resources