Discrete Semiconductor Products
ALD110900APAL
ActiveAdvanced Linear Devices Inc.
MOSFETS DUAL EPAD(R) N-CH
Discrete Semiconductor Products
ALD110900APAL
ActiveAdvanced Linear Devices Inc.
MOSFETS DUAL EPAD(R) N-CH
Technical Specifications
Parameters and characteristics for this part
| Specification | ALD110900APAL |
|---|---|
| Channel Count | 2 |
| Configuration | Matched Pair, N-Channel |
| Configuration - Features | Dual |
| Drain to Source Voltage (Vdss) | 10.6 V |
| Input Capacitance (Ciss) (Max) | 2.5 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 70 °C |
| Operating Temperature (Min) | 0 °C |
| Package Length | 0.3 in |
| Package Name | 8-PDIP, 8-DIP |
| Package Width | 7.62 mm |
| Power - Max | 0.5 W |
| Rds On (Max) | 500 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 10 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
CAD
3D models and CAD resources for this part
Description
General part information
ALD110900 Series
Mosfet Array 10.6V 500mW Through Hole 8-PDIP
Documents
Technical documentation and resources