SQ3418AEEV-T1_GE3

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MOSFET N-CHANNEL 30V 7.8A 6TSOP

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Discrete Semiconductor Products

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MOSFET N-CHANNEL 30V 7.8A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SQ3418AEEV-T1_GE3

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	528 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	5 W
Rds On (Max) @ Id, Vgs [Max]	35 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Qualification	Current - Continuous Drain (Id) @ 25°C	Grade	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs [Max]
Vishay General Semiconductor - Diodes Division SQ3418AEEV-T1_BE3	20 V	-55 °C	175 ░C	4.5 V 10 V	2.5 V	32 mOhm	Surface Mount	5 W	40 V	AEC-Q101	8 A	Automotive	N-Channel	6-TSOP	12.4 nC	SOT-23-6 Thin TSOT-23-6	675 pF	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division SQ3418AEEV-T1_GE3	20 V	-55 °C	175 ░C	4.5 V 10 V	2.5 V		Surface Mount	5 W	40 V		8 A		N-Channel	6-TSOP		SOT-23-6 Thin TSOT-23-6	528 pF	MOSFET (Metal Oxide)	35 mOhm
Vishay General Semiconductor - Diodes Division SQ3418EV-T1_GE3	20 V	-55 °C	175 ░C	4.5 V 10 V	2.5 V	32 mOhm	Surface Mount	5 W	40 V	AEC-Q101	8 A	Automotive	N-Channel	6-TSOP	12.7 nC	SOT-23-6 Thin TSOT-23-6	678 pF	MOSFET (Metal Oxide)

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General part information

N-Channel 40 V 8A 5W (Tc) Surface Mount 6-TSOP

Technical documentation and resources