Discrete Semiconductor Products

VS-HFA200FA120P

Obsolete

DIODE MOD GP 1.2KV 100A SOT227

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Discrete Semiconductor Products

Obsolete

DIODE MOD GP 1.2KV 100A SOT227

Technical Specifications

Parameters and characteristics for this part

Specification	VS-HFA200FA120P

Current - Average Rectified (Io) (per Diode)	100 A
Current - Reverse Leakage @ Vr	75 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Reverse Recovery Time (trr)	150 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOT-227
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	3.6 V

Part	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io) (per Diode)	Speed	Package / Case	Mounting Type	Diode Configuration	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Vishay General Semiconductor - Diodes Division HFA200MD40C	12 µA	TO-244AB	1.2 V	172 A	200 mA 500 ns	TO-244AB	Chassis Mount	1 Pair Common Cathode	400 V	Standard	120 ns
Vishay General Semiconductor - Diodes Division VS-HFA200FA120P	75 µA	SOT-227	3.6 V	100 A	200 mA 500 ns	SOT-227-4 miniBLOC	Chassis Mount	2 Independent	1.2 kV	Standard	150 ns	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 2 Independent 1200 V 100A (DC) Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources