Discrete Semiconductor Products

AONR36368

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MOSFET N-CH 30V 23A/32A 8DFN

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Discrete Semiconductor Products

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MOSFET N-CH 30V 23A/32A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AONR36368

Current - Continuous Drain (Id) @ 25°C	23 A, 32 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1305 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	24 W, 4.1 W
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	8-DFN-EP (3x3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

Part	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Mounting Type	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case
Alpha & Omega Semiconductor Inc. AONR36368	25 nC	30 V	1305 pF	23 A 32 A	4.1 W 24 W	MOSFET (Metal Oxide)	2.1 V	5 mOhm	4.5 V 10 V	8-DFN-EP (3x3)	N-Channel	Surface Mount	20 V	150 °C	-55 °C	8-PowerVDFN

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General part information

N-Channel 30 V 23A (Ta), 32A (Tc) 4.1W (Ta), 24W (Tc) Surface Mount 8-DFN-EP (3x3)

Technical documentation and resources