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Technical Specifications
Parameters and characteristics for this part
| Specification | QS8J2TR |
|---|---|
| Configuration | 2 P-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 4 A |
| Drain to Source Voltage (Vdss) | 12 V |
| FET Feature | Logic Level Gate |
| FET Feature | 1.5 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 20 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1940 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Power - Max [Max] | 550 mW |
| Rds On (Max) @ Id, Vgs | 36 mOhm |
| Supplier Device Package | TSMT8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 7281 | $ 1.48 | |
Description
General part information
QS8J2 Series
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Documents
Technical documentation and resources