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AOTF11N60
Discrete Semiconductor Products

AOTF11N60

Obsolete

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AOTF11N60
Discrete Semiconductor Products

AOTF11N60

Obsolete

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationAOTF11N60
Current - Continuous Drain (Id) @ 25°C11 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1656 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)50 W
Rds On (Max) @ Id, Vgs650 mOhm
Supplier Device PackageTO-220F
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

AOTF11 Series

N-Channel 600 V 11A 50W Through Hole TO-220F

Documents

Technical documentation and resources

No documents available