Discrete Semiconductor Products

SI1411DH-T1-GE3

Active

MOSFET P-CH 150V 420MA SOT363

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET P-CH 150V 420MA SOT363

Technical Specifications

Parameters and characteristics for this part

Specification	SI1411DH-T1-GE3

Current - Continuous Drain (Id) @ 25°C	420 mA
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	6.3 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	2.6 Ohm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Mounting Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)
Vishay General Semiconductor - Diodes Division SI1411DH-T1-GE3	10 V	6.3 nC	P-Channel	150 V	MOSFET (Metal Oxide)	420 mA	2.6 Ohm	4.5 V	6-TSSOP SC-88 SOT-363	SC-70-6	Surface Mount	1 W	-55 °C	150 °C	20 V
Vishay General Semiconductor - Diodes Division SI1411DH-T1-E3	10 V	6.3 nC	P-Channel	150 V	MOSFET (Metal Oxide)	420 mA	2.6 Ohm	4.5 V	6-TSSOP SC-88 SOT-363	SC-70-6	Surface Mount	1 W	-55 °C	150 °C	20 V
Vishay General Semiconductor - Diodes Division SI1411DH-T1-BE3		6.3 nC	P-Channel	150 V	MOSFET (Metal Oxide)	420 mA	2.6 Ohm	4.5 V	6-TSSOP SC-88 SOT-363	SC-70-6	Surface Mount	1 W	-55 °C	150 °C	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 150 V 420mA (Ta) 1W (Ta) Surface Mount SC-70-6

Technical documentation and resources