Specification	NDSH40120C-F155

Capacitance @ Vr, F	2840 pF
Current - Average Rectified (Io)	46 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.75 V

NDSH40120C-F155 Series

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D3, TO-247-2L

Part	Current - Reverse Leakage @ Vr	Technology	Mounting Type	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Supplier Device Package	Current - Average Rectified (Io)	Package / Case
ON Semiconductor NDSH40120C-F155	200 µA	SiC (Silicon Carbide) Schottky	Through Hole	0 ns	2840 pF	175 ░C	-55 C	1.75 V	1.2 kV	No Recovery Time	TO-247-2	46 A	TO-247-2

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 16.00
		10	$ 11.46
		25	$ 10.30
		100	$ 8.99
		250	$ 8.36
Newark	Each	1	$ 20.02
		10	$ 14.37
		25	$ 14.37
		50	$ 14.35
		100	$ 13.10
ON Semiconductor	N/A	1	$ 8.41

Description

General part information

NDSH40120C-F155 Series

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.