Specification	FFSB1065B-F085

Capacitance @ Vr, F	421 pF
Current - Average Rectified (Io)	27 A
Current - Reverse Leakage @ Vr	40 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Qualification	AEC-Q101
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-263 (D2PAK)
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

FFSB1065B-F085 Series

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 650V, D2, D2PAK

Part	Supplier Device Package	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Grade	Current - Reverse Leakage @ Vr	Qualification	Speed	Current - Average Rectified (Io)	Technology	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Reverse Recovery Time (trr)
ON Semiconductor FFSB1065B-F085	TO-263 (D2PAK)	421 pF	650 V	Automotive	40 µA	AEC-Q101	No Recovery Time	27 A	SiC (Silicon Carbide) Schottky	1.7 V	Surface Mount	175 ░C	-55 C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	0 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.41
		10	$ 2.86
		100	$ 2.31
	Digi-Reel®	1	$ 3.41
		10	$ 2.86
		100	$ 2.31
	Tape & Reel (TR)	800	$ 2.06
		1600	$ 1.76
		2400	$ 1.66
		5600	$ 1.59
Newark	Each (Supplied on Cut Tape)	1	$ 4.16
		10	$ 3.42
		25	$ 3.29
		50	$ 3.15
		100	$ 3.02
		250	$ 2.95
		500	$ 2.87
		1600	$ 2.60
ON Semiconductor	N/A	1	$ 1.46

Description

General part information

FFSB1065B-F085 Series

EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.