Discrete Semiconductor Products

KSE13003H2ASTU

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TRANS GP BJT NPN 400V 1.5A 3-PIN(3+TAB) TO-126 TUBE

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Discrete Semiconductor Products

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TRANS GP BJT NPN 400V 1.5A 3-PIN(3+TAB) TO-126 TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	KSE13003H2ASTU

Current - Collector (Ic) (Max) [Max]	1.5 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	14
Frequency - Transition	4 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	20 W
Supplier Device Package	TO-126-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max)	400 V

NPN Silicon Transistor

Part	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Operating Temperature	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor KSE13003TH2ATU	TO-220-3	400 V	Through Hole	TO-220-3	1.5 A	4 MHz	NPN	14	20 W	150 °C	3 V
ON Semiconductor KSE13003TH2ATU	TO-220-3	400 V	Through Hole	TO-220-3	1.5 A	4 MHz	NPN	14	20 W	150 °C	3 V
ON Semiconductor KSE13003H2ASTU	TO-126-3 TO-225AA	400 V	Through Hole	TO-126-3	1.5 A	4 MHz	NPN	14	20 W	150 °C	3 V
ON Semiconductor KSE13003AS	TO-126-3 TO-225AA	400 V	Through Hole	TO-126-3	1.5 A	4 MHz	NPN	8	20 W	150 °C	3 V
ON Semiconductor KSE13003ASTU	TO-126-3 TO-225AA	400 V	Through Hole	TO-126-3	1.5 A	4 MHz	NPN	8	20 W	150 °C	3 V
ON Semiconductor KSE13003TH1ATU	TO-220-3	400 V	Through Hole	TO-220-3	1.5 A	4 MHz	NPN	9	20 W	150 °C	3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Silicon Transistor

Technical documentation and resources