Discrete Semiconductor Products

ECH8601M-C-TL-H

Obsolete

MOSFET 2N-CH 24V 8A 8ECH

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 24V 8A 8ECH

Technical Specifications

Parameters and characteristics for this part

Specification	ECH8601M-C-TL-H

Configuration	2 N-Channel (Dual) Common Drain
Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	24 V
FET Feature	Logic Level Gate
FET Feature	2.5 V
Gate Charge (Qg) (Max) @ Vgs	7.5 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	8-ECH
Technology	MOSFET (Metal Oxide)

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs	Configuration	Operating Temperature	Mounting Type	FET Feature	FET Feature
ON Semiconductor ECH8601M-C-TL-H	24 V	23 mOhm	8-ECH	1.5 W	8 A	MOSFET (Metal Oxide)	7.5 nC	2 N-Channel (Dual) Common Drain	150 °C	Surface Mount	Logic Level Gate	2.5 V
ON Semiconductor ECH8601M-C-TL-HX			8-ECH		8 A				150 °C	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 24V 8A 1.5W Surface Mount 8-ECH

Technical documentation and resources

No documents available