Discrete Semiconductor Products

MMBTA05

Obsolete

NPN GENERAL PURPOSE AMPLIFIER

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Discrete Semiconductor Products

Obsolete

NPN GENERAL PURPOSE AMPLIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	MMBTA05

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	350 mW
Supplier Device Package	SOT-23-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	Frequency - Transition	Package / Case	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Power - Max [Max]
ON Semiconductor MMBTA05	NPN	-55 °C	150 °C	100 MHz	SC-59 SOT-23-3 TO-236-3	Surface Mount	60 V	100 hFE	250 mV	100 nA	500 mA	SOT-23-3	350 mW
ON Semiconductor MMBTA05LT3	NPN	-55 °C	150 °C	100 MHz	SC-59 SOT-23-3 TO-236-3	Surface Mount	60 V	100 hFE	250 mV	100 nA	500 mA	SOT-23-3 (TO-236)	225 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 60 V 500 mA 100MHz 350 mW Surface Mount SOT-23-3

Technical documentation and resources