Discrete Semiconductor Products

IRFR120_R4941

Obsolete

MOSFET N-CH 100V 8.4A TO252AA

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 8.4A TO252AA

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR120_R4941

Current - Continuous Drain (Id) @ 25°C	8.4 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	270 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]
ON Semiconductor IRFR130ATM	N-Channel	100 V	790 pF	13 A	20 V	-55 °C	150 °C	10 V	2.5 W 41 W	110 mOhm	Surface Mount	4 V	TO-252AA	36 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)
ON Semiconductor IRFR120_R4941	N-Channel	100 V		8.4 A	20 V	-55 °C	175 ░C	10 V		270 mOhm	Surface Mount	4 V	TO-252AA		DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	350 pF	50 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 8.4A (Tc) 50W (Tc) Surface Mount TO-252AA

Technical documentation and resources