Specification	NVTFS008N04CTAG

Current - Continuous Drain (Id) @ 25°C	48 A, 14 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	625 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	38 W, 3.1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	8.5 mOhm
Supplier Device Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

NVTFS008N04C Series

Power MOSFET, Single N-Channel, 40 V, 7.1 mOhms, 48 A

Part	FET Type	Package / Case	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Grade	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Qualification
ON Semiconductor NVTFS008N04CTAG	N-Channel	8-PowerWDFN	20 V	3.1 W 38 W	40 V	Automotive	8-WDFN (3.3x3.3)	-55 °C	175 ░C	Surface Mount	625 pF	14 A 48 A	10 nC	10 V	MOSFET (Metal Oxide)	3.5 V	8.5 mOhm	AEC-Q101
ON Semiconductor NVTFWS008N04CTAG	N-Channel	8-PowerWDFN	20 V	3.1 W 38 W	40 V	Automotive	8-WDFN (3.3x3.3)	-55 °C	175 ░C	Surface Mount Wettable Flank	625 pF	14 A 48 A	10 nC	10 V	MOSFET (Metal Oxide)	3.5 V	8.5 mOhm	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.86
		10	$ 1.19
		100	$ 0.80
		500	$ 0.63
	Digi-Reel®	1	$ 1.86
		10	$ 1.19
		100	$ 0.80
		500	$ 0.63
	Tape & Reel (TR)	1500	$ 0.55
		3000	$ 0.51
		4500	$ 0.49
		7500	$ 0.47
Newark	Each	1000	$ 0.63
		2500	$ 0.51
		10000	$ 0.49
ON Semiconductor	N/A	1	$ 0.43

Description

General part information

NVTFS008N04C Series

Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.